Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 9905712-008.A00G 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston 9905712-008.A00G 16GB

Kingston 9905712-008.A00G 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16

测试中的平均数值

Kingston 9905712-008.A00G 16GB

需要考虑的原因
Kingston 9905712-008.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 46

左右 -77% 更低的延时
更快的写入速度，GB/s

12.4 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905712-008.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 26
读取速度，GB/s

2,909.8 16.0
写入速度，GB/s

1,519.2 12.4
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2833

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M471B5173QH0-YK0 4GB

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Samsung M393B1G70BH0-YK0 8GB

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A-DATA Technology AM1U16BC4P2-B19C 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Patriot Memory (PDP Systems) PSD44G240081S 4GB

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SpecTek Incorporated ?????????????????? 2GB

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SK Hynix GKE800SO102408-2400 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

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Kingston 99U5471-030.A00LF 8GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

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Corsair CMV4GX3M1B1600C11 4GB

Corsair CMK16GX4M4A2133C15 4GB

Corsair CMK16GX4M4A2133C15 4GB