Samsung M3 78T3354BZ0-CCC 256MB vs Nanya Technology M471A5143EB1-CRC 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 79

左右 42% 更低的延时
更快的读取速度，GB/s

2 14.7

测试中的平均数值

Nanya Technology M471A5143EB1-CRC 4GB

需要考虑的原因
Nanya Technology M471A5143EB1-CRC 4GB

报告一个错误

更快的写入速度，GB/s

7.9 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Nanya Technology M471A5143EB1-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 79
读取速度，GB/s

2,909.8 14.7
写入速度，GB/s

1,519.2 7.9
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 1710

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

Essencore Limited IM48GU88N26-GIIHA0 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston KHX2400C12D4/4GX 4GB

Kingston KHX2400C12D4/4GX 4GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Kingston KHX2666C15/8G 8GB

Kingston KHX2666C15/8G 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Wilk Elektronik S.A. GR2133D464L15/8G 8GB

Wilk Elektronik S.A. GR2133D464L15/8G 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Kingston KF2933C17S4/32G 32GB

Kingston KF2933C17S4/32G 32GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMT32GX4M2C3466C16 16GB

Corsair CMT32GX4M2C3466C16 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-2800C15-8GTXG 8GB

G Skill Intl F4-2800C15-8GTXG 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-4400C16-8GTRS 8GB

G Skill Intl F4-4400C16-8GTRS 8GB

Kingston 9905783-025.A01G 16GB

Kingston 9905783-025.A01G 16GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB