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Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 2400 C17 8GB

Samsung M3 78T3354BZ0-CCC 256MB vs Patriot Memory (PDP Systems) 2400 C17 8GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Patriot Memory (PDP Systems) 2400 C17 8GB

Patriot Memory (PDP Systems) 2400 C17 8GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 73
    左右 37% 更低的延时
  • 更快的读取速度，GB/s
    2 left arrow 14.4
    测试中的平均数值
Patriot Memory (PDP Systems) 2400 C17 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 2400 C17 8GB
报告一个错误
  • 更快的写入速度，GB/s
    7.8 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 2400 C17 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 73
  • 读取速度，GB/s
    2,909.8 left arrow 14.4
  • 写入速度，GB/s
    1,519.2 left arrow 7.8
  • 内存带宽，mbps
    3200 left arrow 19200
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    241 left arrow 1842

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Patriot Memory (PDP Systems) 2400 C17 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 2400 C17 8GB
Patriot Memory (PDP Systems) 2400 C17 8GB
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Kingston 9965516-112.A00LF 16GB
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G Skill Intl F4-3400C16-8GTZSW 8GB
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Corsair CMD32GX4M4B3600C16 8GB
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Hexon Technology Pte Ltd HEXON 1GB
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Kingston 99U5471-052.A00LF 8GB
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Corsair CMW16GX4M2K3600C16 8GB
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Kingston KF552C40-16 16GB
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Team Group Inc. 16GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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Crucial Technology BLS8G4D240FSA.16FAD 8GB
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SK Hynix HMT351U6CFR8C-H9 4GB
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Corsair CMR32GX4M2C3000C15 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
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Crucial Technology BLS8G4S240FSD.M16FAD 8GB
内存RAM
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Samsung M378B5273DH0-CH9 4GB
Transcend Information JM2400HLB-8G 8GB
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