Samsung M3 78T3354BZ0-CCC 256MB vs Patriot Memory (PDP Systems) PSD48G320081 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Patriot Memory (PDP Systems) PSD48G320081 8GB

Patriot Memory (PDP Systems) PSD48G320081 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 16.8

测试中的平均数值

Patriot Memory (PDP Systems) PSD48G320081 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD48G320081 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 46

左右 -31% 更低的延时
更快的写入速度，GB/s

13.6 1,519.2

测试中的平均数值
更高的内存带宽，mbps

25600 3200

左右 8 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Patriot Memory (PDP Systems) PSD48G320081 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 35
读取速度，GB/s

2,909.8 16.8
写入速度，GB/s

1,519.2 13.6
内存带宽，mbps

3200 25600

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

241 3049

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

Essencore Limited IM48GU48N28-GGGHM 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingmax Semiconductor GLLF62F-D8---------- 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905702-006.A00G 8GB

Kingston 9905702-006.A00G 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Crucial Technology CT8G4SFRA32A.C8FE 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

Kingston ACR26D4S9S8KA-8 8GB

Kingston ACR26D4S9S8KA-8 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston X0N6VG-HYD2 16GB

Kingston X0N6VG-HYD2 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston HP24D4U7S8MBP-4 4GB

Kingston HP24D4U7S8MBP-4 4GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

Patriot Memory (PDP Systems) PSD432G32002S 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB