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Samsung M3 78T3354BZ0-CCC 256MB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Ramaxel Technology RMSA3320ME88HBF-3200 16GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.2
    测试中的平均数值
Ramaxel Technology RMSA3320ME88HBF-3200 16GB 需要考虑的原因
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 46
    左右 -12% 更低的延时
  • 更快的写入速度，GB/s
    11.7 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 3200
    左右 8 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 41
  • 读取速度，GB/s
    2,909.8 left arrow 16.2
  • 写入速度，GB/s
    1,519.2 left arrow 11.7
  • 内存带宽，mbps
    3200 left arrow 25600
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2847

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F4-2666C18-4GFX 4GB
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Kingston 9905665-020.A00G 4GB
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Samsung M378B5673EH1-CF8 2GB
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Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
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Samsung M393B5270CH0-CH9 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
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Kingston KHX1600C9D3/8G 8GB
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内存RAM
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Kingston 99P5474-014.A00LF 4GB
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内存RAM
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A-DATA Technology DQVE1908 512MB
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内存RAM
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Samsung M391B5673EH1-CH9 2GB
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G Skill Intl F4-3200C14-8GTZR 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
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G Skill Intl F4-3200C15-8GTZKO 8GB
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