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Samsung M3 78T3354BZ0-CCC 256MB
Samsung M471A2K43EB1-CWE 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Samsung M471A2K43EB1-CWE 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Samsung M471A2K43EB1-CWE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
低于PassMark测试中的延时,ns
46
55
左右 16% 更低的延时
更快的读取速度,GB/s
2
15.8
测试中的平均数值
需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
更快的写入速度,GB/s
13.8
1,519.2
测试中的平均数值
更高的内存带宽,mbps
25600
3200
左右 8 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M471A2K43EB1-CWE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
55
读取速度,GB/s
2,909.8
15.8
写入速度,GB/s
1,519.2
13.8
内存带宽,mbps
3200
25600
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度
3-3-3-12 / 400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
241
2701
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Samsung M471A2K43EB1-CWE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
Samsung M471A2K43EB1-CTD 16GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
Corsair CM2X1024-8500C5D 1GB
Apacer Technology 78.CAGP7.C7C0B 8GB
Avant Technology F6451U64F9333G 4GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3600C16-8GTZRC 8GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3400C16-8GTZ 8GB
A-DATA Technology DQVE1908 512MB
Micron Technology 8ATF1G64AZ-3G2J1 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Tanbassh 8G 2666MHZ 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
INTENSO 5641152 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M471A2K43CBCBCRC 16GB
Crucial Technology CT25664BA1339.M8FK 2GB
Corsair CMT128GX4M4C3200C16 32GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
报告一个错误
×
Bug description
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