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Samsung M3 78T3354BZ0-CCC 256MB
Smart Modular SMS4WEC8C2K0446FCG 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Smart Modular SMS4WEC8C2K0446FCG 16GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.1
    测试中的平均数值
Smart Modular SMS4WEC8C2K0446FCG 16GB 需要考虑的原因
Smart Modular SMS4WEC8C2K0446FCG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 46
    左右 -31% 更低的延时
  • 更快的写入速度，GB/s
    9.0 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 3200
    左右 8 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Smart Modular SMS4WEC8C2K0446FCG 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 35
  • 读取速度，GB/s
    2,909.8 left arrow 14.1
  • 写入速度，GB/s
    1,519.2 left arrow 9.0
  • 内存带宽，mbps
    3200 left arrow 25600
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    241 left arrow 2583

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Smart Modular SMS4WEC8C2K0446FCG 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
ISD Technology Limited KD48GU880-32A160X 8GB
ISD Technology Limited KD48GU880-32A160X 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Golden Empire CL18-20-20 D4-3000 8GB
Golden Empire CL18-20-20 D4-3000 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
V-Color Technology Inc. TD416G26D819-VC 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Corsair CM4X16GE2666C16K8 16GB
Corsair CM4X16GE2666C16K8 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Kingston 9905711-032.A00G 8GB
Kingston 9905711-032.A00G 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Crucial Technology BL16G26C16S4B.16FD 16GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Kingston CAC24D4S7D8MB-16 16GB
Kingston CAC24D4S7D8MB-16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Samsung M471A1G43EB1-CPB 8GB
Samsung M471A1G43EB1-CPB 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Micron Technology AFLD48VH1P 8GB
Micron Technology AFLD48VH1P 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9905633-017.A00G 8GB
Kingston 9905633-017.A00G 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
Crucial Technology CT16G4DFD8213.M16FA 16GB
内存RAM