Samsung M3 78T5663EH3-CF7 2GB vs Corsair CMD16GX4M2B3466C16 8GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 20.8

测试中的平均数值
更快的写入速度，GB/s

2,451.8 16.6

测试中的平均数值

Corsair CMD16GX4M2B3466C16 8GB

需要考虑的原因
Corsair CMD16GX4M2B3466C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 65

左右 -261% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Corsair CMD16GX4M2B3466C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 18
读取速度，GB/s

4,605.9 20.8
写入速度，GB/s

2,451.8 16.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-090.A01LF 4GB

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Patriot Memory (PDP Systems) PSD44G240082 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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A-DATA Technology AO1P24HCST2-BSCS 16GB

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G Skill Intl F4-2666C19-16GIS 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Avant Technology J642GU42J7240N4 16GB

Avant Technology J642GU42J7240N4 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston 9905625-096.A00G 16GB

Kingston 9905625-096.A00G 16GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Panram International Corporation PUD43000C164G2NJK 4GB

Panram International Corporation PUD43000C164G2NJK 4GB