Samsung M3 78T5663EH3-CF7 2GB vs Corsair CMK32GX4M2C3000C16 16GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Corsair CMK32GX4M2C3000C16 16GB

Corsair CMK32GX4M2C3000C16 16GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.5

测试中的平均数值
更快的写入速度，GB/s

2,451.8 15.7

测试中的平均数值

Corsair CMK32GX4M2C3000C16 16GB

需要考虑的原因
Corsair CMK32GX4M2C3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Corsair CMK32GX4M2C3000C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

4,605.9 19.5
写入速度，GB/s

2,451.8 15.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3782

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C10D3/8GX 8GB

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Kingston KVR16N11/8-SP 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Kingston 9905471-002.A00LF 2GB

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Crucial Technology CB16GS2400.C16J 16GB

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Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Kingston KF3600C18D4/16GX 16GB

Kingston KF3600C18D4/16GX 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Apacer Technology 78.CAGMT.40C0B 8GB

Apacer Technology 78.CAGMT.40C0B 8GB