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Samsung M3 78T5663EH3-CF7 2GB
Crucial Technology BL8G30C15U4W.8FE 8GB

Samsung M3 78T5663EH3-CF7 2GB vs Crucial Technology BL8G30C15U4W.8FE 8GB

总分
star star star star star
Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分
star star star star star
Crucial Technology BL8G30C15U4W.8FE 8GB

Crucial Technology BL8G30C15U4W.8FE 8GB

差异 规格 评论

差异

Samsung M3 78T5663EH3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,451.8 left arrow 14.8
    测试中的平均数值
Crucial Technology BL8G30C15U4W.8FE 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4W.8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 65
    左右 -97% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663EH3-CF7 2GB
Crucial Technology BL8G30C15U4W.8FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 33
  • 读取速度，GB/s
    4,605.9 left arrow 19.7
  • 写入速度，GB/s
    2,451.8 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    878 left arrow 3401

Samsung M3 78T5663EH3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB

Crucial Technology BL8G30C15U4W.8FE 8GB RAM的比较

Kingston 9965525-140.A00LF 8GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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