Samsung M3 78T5663EH3-CF7 2GB vs Micron Technology TEAMGROUP-UD4-2400 16GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 16.8

测试中的平均数值
更快的写入速度，GB/s

2,451.8 11.3

测试中的平均数值

Micron Technology TEAMGROUP-UD4-2400 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 65

左右 -117% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Micron Technology TEAMGROUP-UD4-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 30
读取速度，GB/s

4,605.9 16.8
写入速度，GB/s

2,451.8 11.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

878 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5316G1609U2K 8GB

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Crucial Technology BL8G30C15U4R.M8FE 8GB

Crucial Technology BL8G30C15U4R.M8FE 8GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Corsair CMWX8GF2933Z16W4 8GB

Corsair CMWX8GF2933Z16W4 8GB

Corsair VS1GB800D2 1GB

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