Samsung M3 78T5663EH3-CF7 2GB vs SK Hynix HMA81GR7AFR8N-UH 8GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

SK Hynix HMA81GR7AFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GR7AFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

57 65

左右 -14% 更低的延时
更快的读取速度，GB/s

9.4 4

测试中的平均数值
更快的写入速度，GB/s

7.6 2,451.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

SK Hynix HMA81GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 57
读取速度，GB/s

4,605.9 9.4
写入速度，GB/s

2,451.8 7.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

878 2170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMA81GR7AFR8N-UH 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Corsair CMK16GX4M2Z3200C16 8GB

Corsair CMK16GX4M2Z3200C16 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 9905625-036.A00G 16GB

Kingston 9905625-036.A00G 16GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Kingston 9905624-007.A00G 8GB

Kingston 9905624-007.A00G 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston 9965600-027.A00G 16GB

Kingston 9965600-027.A00G 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Patriot Memory (PDP Systems) PSD48G24002 8GB

Patriot Memory (PDP Systems) PSD48G24002 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology CT8G4SFS632A 8GB

Crucial Technology CT8G4SFS632A 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB