Samsung M3 78T5663FB3-CF7 2GB vs Kingston 9905598-009.A00G 8GB

总分

Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

总分

Kingston 9905598-009.A00G 8GB

Kingston 9905598-009.A00G 8GB

差异规格评论

差异

Samsung M3 78T5663FB3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663FB3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 13.5

测试中的平均数值
更快的写入速度，GB/s

2,096.4 10.4

测试中的平均数值

Kingston 9905598-009.A00G 8GB

需要考虑的原因
Kingston 9905598-009.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 60

左右 -114% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663FB3-CF7 2GB

Kingston 9905598-009.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 28
读取速度，GB/s

4,168.7 13.5
写入速度，GB/s

2,096.4 10.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 2638

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Samsung M3 78T2863EHS-CF7 1GB

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Apacer Technology GD2.1527CS.001 8GB

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Kingston 99U5474-028.A00LF 4GB

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Essencore Limited KD48GU880-32N220T 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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Kingston KVR16N11/8-SP 8GB

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Patriot Memory (PDP Systems) 4266 C18 Series 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Corsair CMK32GX4M2L3000C15 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Patriot Memory (PDP Systems) 2666 C18 Series 16GB

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SpecTek Incorporated ?????????????????? 2GB

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Kingston LV32D4S2S8HD-8 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Corsair CMK64GX4M8X4000C19 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

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Samsung M393A2K43BB1-CRC 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

G Skill Intl F4-2400C15-4GRR 4GB

G Skill Intl F4-2400C15-4GRR 4GB