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Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMT32GX4M4C3466C16 8GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs Corsair CMT32GX4M4C3466C16 8GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
Corsair CMT32GX4M4C3466C16 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
4
20.2
测试中的平均数值
更快的写入速度,GB/s
2,168.2
17.9
测试中的平均数值
需要考虑的原因
Corsair CMT32GX4M4C3466C16 8GB
报告一个错误
低于PassMark测试中的延时,ns
19
60
左右 -216% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMT32GX4M4C3466C16 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
19
读取速度,GB/s
4,595.2
20.2
写入速度,GB/s
2,168.2
17.9
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
941
3862
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Corsair CMT32GX4M4C3466C16 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905584-016.A00LF 4GB
Kingston CBD24D4S7D8MB-16 16GB
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Corsair CMU32GX4M2D3200C16 16GB
Kingston ACR16D3LS1KBG/8G 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Kingston KVR533D2N4 512MB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Samsung M471B5673FH0-CF8 2GB
Aquarius Production Company LLC 16G-D4-2666-MR 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3200C16-16GVKA 16GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CMSX16GX4M2A3200C22 8GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
Samsung M393B1K70CH0-CH9 8GB
Apacer Technology GD2.11173T.001 4GB
报告一个错误
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Bug description
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