Samsung M3 78T5663RZ3-CE6 2GB vs Crucial Technology CT8G4DFS824A.M8FH3 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值

Crucial Technology CT8G4DFS824A.M8FH3 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FH3 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 60

左右 -200% 更低的延时
更快的写入速度，GB/s

8.2 2,168.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 20
读取速度，GB/s

4,595.2 17.0
写入速度，GB/s

2,168.2 8.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 2503

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology CT8G4DFS824A.M8FH3 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology BLS8G4D26BFSC.16FE 8GB

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Corsair CMV4GX3M1B1600C11 4GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

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Kingston 99U5474-028.A00LF 4GB

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Crucial Technology CT8G4DFS824A.C8FJ 8GB

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Kingston KVR800D2N6/2G 2GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMK16GX4M4B3400C16 4GB

Corsair CMK16GX4M4B3400C16 4GB