Samsung M3 78T5663RZ3-CE6 2GB vs Essencore Limited IM48GU88A30-FGGHMB 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Essencore Limited IM48GU88A30-FGGHMB 8GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 19

测试中的平均数值
更快的写入速度，GB/s

2,168.2 12.7

测试中的平均数值

Essencore Limited IM48GU88A30-FGGHMB 8GB

需要考虑的原因
Essencore Limited IM48GU88A30-FGGHMB 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 60

左右 -216% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 19
读取速度，GB/s

4,595.2 19.0
写入速度，GB/s

2,168.2 12.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 3110

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-037.A00LF 4GB

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Corsair CMR16GX4M2C3466C16 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Corsair CM2X1024-6400C4 1GB

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Crucial Technology BLS8G4D30AESBK.M8FE 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingston KHX2133C13S4/16G 16GB

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Micron Technology 8G2666CL19 8GB

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ISD Technology Limited KD48GU880-32A160X 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Micron Technology 4ATF1G64AZ-3G2B1 8GB

Micron Technology 4ATF1G64AZ-3G2B1 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMK32GX4M4A2133C15 8GB

Corsair CMK32GX4M4A2133C15 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Transcend Information JM2400HLB-8G 8GB

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Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

G Skill Intl F4-3733C17-8GTZKW 8GB

G Skill Intl F4-3733C17-8GTZKW 8GB