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Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-4400C19-16GVK 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-4400C19-16GVK 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
G Skill Intl F4-4400C19-16GVK 16GB

G Skill Intl F4-4400C19-16GVK 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 15.5
    测试中的平均数值
G Skill Intl F4-4400C19-16GVK 16GB 需要考虑的原因
G Skill Intl F4-4400C19-16GVK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 60
    左右 -88% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-4400C19-16GVK 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 32
  • 读取速度，GB/s
    4,595.2 left arrow 20.5
  • 写入速度，GB/s
    2,168.2 left arrow 15.5
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3672

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

G Skill Intl F4-4400C19-16GVK 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M4 70T5663EH3-CF7 2GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Patriot Memory (PDP Systems) PSD34G16002 4GB
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内存RAM
Corsair CMSA4GX3M1A1333C9 4GB
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内存RAM
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Kingston ACR16D3LS1NGG/2G 2GB
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SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
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Team Group Inc. ZEUS-2133 8GB
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Kingston 9905598-044.A00G 16GB
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