Samsung M3 78T5663RZ3-CE6 2GB vs Kingston 9965657-011.A00G 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

Kingston 9965657-011.A00G 16GB

Kingston 9965657-011.A00G 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 11.6

测试中的平均数值

Kingston 9965657-011.A00G 16GB

需要考虑的原因
Kingston 9965657-011.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 60

左右 -82% 更低的延时
更快的写入速度，GB/s

9.2 2,168.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9965657-011.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 33
读取速度，GB/s

4,595.2 11.6
写入速度，GB/s

2,168.2 9.2
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

941 2102

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

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Kingston KHX1600C9D3/8G 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M391B5673EH1-CH9 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMT64GX4M4K3600C16 16GB

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Elpida EBJ41UF8BDW0-GN-F 4GB

Elpida EBJ41UF8BDW0-GN-F 4GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB

Micron Technology 18ASF1G72AZ-2G1A1 8GB