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Samsung M3 78T5663RZ3-CE6 2GB
Kingston XRMWRN-HYA 16GB

Samsung M3 78T5663RZ3-CE6 2GB vs Kingston XRMWRN-HYA 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Kingston XRMWRN-HYA 16GB

Kingston XRMWRN-HYA 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 12.0
    测试中的平均数值
Kingston XRMWRN-HYA 16GB 需要考虑的原因
Kingston XRMWRN-HYA 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 60
    左右 -82% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Kingston XRMWRN-HYA 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 33
  • 读取速度，GB/s
    4,595.2 left arrow 15.9
  • 写入速度，GB/s
    2,168.2 left arrow 12.0
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 2962

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Kingston XRMWRN-HYA 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston XRMWRN-HYA 16GB
Kingston XRMWRN-HYA 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 9905622-024.A00G 4GB
Kingston 9905622-024.A00G 4GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-3600C14-16GTZR 16GB
G Skill Intl F4-3600C14-16GTZR 16GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.CAGP7.4020B 8GB
Apacer Technology 78.CAGP7.4020B 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3000C16-16GSXWB 16GB
G Skill Intl F4-3000C16-16GSXWB 16GB
内存RAM
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Apacer Technology GD2.1542WS.001 8GB
Apacer Technology GD2.1542WS.001 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-2400C15-8GNT 8GB
G Skill Intl F4-2400C15-8GNT 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK16GX4M2E3200C16 8GB
Corsair CMK16GX4M2E3200C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BL16G32C16U4R.16FE 16GB
Crucial Technology BL16G32C16U4R.16FE 16GB
内存RAM
Nanya Technology NT1GT64U8HB0BN-3C 1GB
Nanya Technology NT1GT64U8HB0BN-3C 1GB
KingSpec KingSpec 16GB
KingSpec KingSpec 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM