RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs SK Hynix HMA451U7AFR8N-TF 4GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
SK Hynix HMA451U7AFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
4
13.2
测试中的平均数值
需要考虑的原因
SK Hynix HMA451U7AFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
60
左右 -107% 更低的延时
更快的写入速度,GB/s
8.9
2,168.2
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
29
读取速度,GB/s
4,595.2
13.2
写入速度,GB/s
2,168.2
8.9
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
941
2284
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
SK Hynix HMA451U7AFR8N-TF 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T5663RZ3-CE6 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KF2933C17S4/32G 32GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-2800C15-8GRBB 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Mushkin 99[2/7/4]200[F/T] 8GB
Kingston 9905403-447.A00LF 4GB
Crucial Technology CT8G4SFS824A.C8FAD1 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
A-DATA Technology DDR3 2400 2OZ 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CM4X8GF2133C15S2 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMR16GX4M2F4000C19 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung M393A2K40CB1-CRC 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Golden Empire CL16-16-16 D4-2400 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3600C16-16GTZRC 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMW32GX4M2E3200C16 16GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-3466C16-4GVK 4GB
报告一个错误
×
Bug description
Source link