Samsung M3 78T5663RZ3-CE6 2GB vs SK Hynix HMA81GS6CJR8N-XN 8GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值
更快的写入速度，GB/s

2,168.2 11.9

测试中的平均数值

SK Hynix HMA81GS6CJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GS6CJR8N-XN 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 60

左右 -67% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

SK Hynix HMA81GS6CJR8N-XN 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 36
读取速度，GB/s

4,595.2 15.5
写入速度，GB/s

2,168.2 11.9
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

941 2734

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Avant Technology W644GU44J2320NH 32GB

Avant Technology W644GU44J2320NH 32GB

Asgard VMA45UG-MEC1U2AW1 8GB

Asgard VMA45UG-MEC1U2AW1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

Kingston 99U5474-038.A00LF 4GB

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Kingston 99U5643-001.A00G 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMH16GX4M2E3200C16 8GB

Corsair CMH16GX4M2E3200C16 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMT32GX4M2C3200C14 16GB

Corsair CMT32GX4M2C3200C14 16GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Kllisre 99P54280002.A00LF 8GB

Kllisre 99P54280002.A00LF 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2133C15-16GFT 16GB

G Skill Intl F4-2133C15-16GFT 16GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

G Skill Intl F4-3733C17-8GTZKK 8GB

G Skill Intl F4-3733C17-8GTZKK 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB

Crucial Technology BLS16G4S240FSD.16FAD 16GB