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Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Samsung M3 78T5663RZ3-CF7 2GB vs Crucial Technology BLS16G4D26BFSC.16FBD 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 13.4
    测试中的平均数值
Crucial Technology BLS16G4D26BFSC.16FBD 16GB 需要考虑的原因
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 65
    左右 -81% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 36
  • 读取速度，GB/s
    4,806.8 left arrow 15.0
  • 写入速度，GB/s
    2,784.6 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    932 left arrow 3098

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
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Samsung M378A1G43DB0-CPB 8GB
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内存RAM
Kingston 99U5474-010.A00LF 2GB
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内存RAM
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Transcend Information TS1GLH64V4H 8GB
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Kingston 99U5584-017.A00LF 4GB
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