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Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLS4G4D240FSA.M8F 4GB

Samsung M3 78T5663RZ3-CF7 2GB vs Crucial Technology BLS4G4D240FSA.M8F 4GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.6
    测试中的平均数值
Crucial Technology BLS4G4D240FSA.M8F 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSA.M8F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 65
    左右 -141% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 2,784.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 27
  • 读取速度，GB/s
    4,806.8 left arrow 13.6
  • 写入速度，GB/s
    2,784.6 left arrow 9.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    932 left arrow 2403

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Crucial Technology BLS4G4D240FSA.M8F 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Micron Technology 16JSF25664HZ-1G1F1 2GB
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Kingston 9905316-106.A02LF 1GB
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Micron Technology 8ATF1G64HZ-2G3E1 8GB
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内存RAM
SK Hynix HMT41GU7MFR8A-H9 8GB
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内存RAM
Kingston 9905403-090.A01LF 4GB
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Kingston 9965516-112.A00LF 16GB
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Corsair CMSX16GX4M1A2400C16 16GB
Kingston KF552C40-16 16GB
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内存RAM
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Crucial Technology BLT2G3D1608DT1TX0 2GB
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内存RAM
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内存RAM
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SK Hynix HMA41GR7AFR4N-TF 8GB
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