Samsung M3 78T5663RZ3-CF7 2GB vs Crucial Technology BLS8G4D240FSEK.8FD 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Crucial Technology BLS8G4D240FSEK.8FD 8GB

Crucial Technology BLS8G4D240FSEK.8FD 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.1

测试中的平均数值

Crucial Technology BLS8G4D240FSEK.8FD 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSEK.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更快的写入速度，GB/s

8.7 2,784.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Crucial Technology BLS8G4D240FSEK.8FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

4,806.8 14.1
写入速度，GB/s

2,784.6 8.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 2372

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK32GX4M4A2400C14 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N

Unifosa Corporation HU564404EP0200 4GB

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Corsair CMK32GX4M4C3333C16 8GB

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G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB