Samsung M3 78T5663RZ3-CF7 2GB vs G Skill Intl F4-2933C16-16GTZRX 16GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 16.7

测试中的平均数值
更快的写入速度，GB/s

2,784.6 13.4

测试中的平均数值

G Skill Intl F4-2933C16-16GTZRX 16GB

需要考虑的原因
G Skill Intl F4-2933C16-16GTZRX 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 65

左右 -195% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-2933C16-16GTZRX 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 22
读取速度，GB/s

4,806.8 16.7
写入速度，GB/s

2,784.6 13.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

932 3188

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Avant Technology W641GU67J7240N8 8GB

Avant Technology W641GU67J7240N8 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Samsung M393B5170FH0-CH9 4GB

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Corsair CMK32GX4M4B3866C18 8GB

Corsair CMK32GX4M4B3866C18 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMR16GX4M2A2666C16 8GB

Corsair CMR16GX4M2A2666C16 8GB