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Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3000C16-16GTZR 16GB

Samsung M3 78T5663RZ3-CF7 2GB vs G Skill Intl F4-3000C16-16GTZR 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
G Skill Intl F4-3000C16-16GTZR 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 14.2
    测试中的平均数值
G Skill Intl F4-3000C16-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3000C16-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 65
    左右 -124% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 29
  • 读取速度，GB/s
    4,806.8 left arrow 17.6
  • 写入速度，GB/s
    2,784.6 left arrow 14.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    932 left arrow 3573

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

G Skill Intl F4-3000C16-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
Crucial Technology BLT4G4D26AFTA.8FADG 4GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
G Skill Intl F4-4133C19-4GTZ 4GB
G Skill Intl F4-4133C19-4GTZ 4GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3000C16-16GTZR 16GB
G Skill Intl F4-3000C16-16GTZR 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMK32GX4M4K4266C19 8GB
Corsair CMK32GX4M4K4266C19 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
G Skill Intl F4-4400C17-8GVK 8GB
G Skill Intl F4-4400C17-8GVK 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-2800C16-4GRK 4GB
G Skill Intl F4-2800C16-4GRK 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK64GX4M2E3200C16 32GB
Corsair CMK64GX4M2E3200C16 32GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9905630-030.A00G 16GB
Kingston 9905630-030.A00G 16GB
内存RAM