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Samsung M3 78T5663RZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Samsung M3 78T5663RZ3-CF7 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 13.5
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 65
    左右 -150% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 26
  • 读取速度，GB/s
    4,806.8 left arrow 16.8
  • 写入速度，GB/s
    2,784.6 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    932 left arrow 2880

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB RAM的比较

Kingston KN2M64-ETB 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Kingston KF3200C16D4/32GX 32GB
Kingston KF3200C16D4/32GX 32GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
G Skill Intl F4-2400C15-16GTZRX 16GB
G Skill Intl F4-2400C15-16GTZRX 16GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Kingston XRGM6C-MIB 16GB
Kingston XRGM6C-MIB 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology BL8G32C16U4W.8FE 8GB
Crucial Technology BL8G32C16U4W.8FE 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW32GX4M4A2666C16 8GB
Corsair CMW32GX4M4A2666C16 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Avant Technology J641GU42J7240N3 8GB
Avant Technology J641GU42J7240N3 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
V-GEN D4H8GS24A8 8GB
V-GEN D4H8GS24A8 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology CT8G4SFS632A 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Apacer Technology 78.CAGP7.40C0B 8GB
Apacer Technology 78.CAGP7.40C0B 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-3200C14-16GTZR 16GB
G Skill Intl F4-3200C14-16GTZR 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Golden Empire CL16-16-16 D4-3200 4GB
Golden Empire CL16-16-16 D4-3200 4GB
内存RAM