Samsung M3 78T5663RZ3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Samsung M3 78T5663RZ3-CF7 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 16.2

测试中的平均数值
更快的写入速度，GB/s

2,784.6 12.7

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 65

左右 -132% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 28
读取速度，GB/s

4,806.8 16.2
写入速度，GB/s

2,784.6 12.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 2417

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Patriot Memory (PDP Systems) PSD44G266681 4GB

Patriot Memory (PDP Systems) PSD44G266681 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Kingston 9905702-006.A00G 8GB

Kingston 9905702-006.A00G 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB