Samsung M3 78T5663RZ3-CF7 2GB vs Kingston 2G-UDIMM 2GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Kingston 2G-UDIMM 2GB

Kingston 2G-UDIMM 2GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的写入速度，GB/s

2,784.6 2,565.5

测试中的平均数值

Kingston 2G-UDIMM 2GB

需要考虑的原因
Kingston 2G-UDIMM 2GB

报告一个错误

低于PassMark测试中的延时，ns

54 65

左右 -20% 更低的延时
更快的读取速度，GB/s

5 4

测试中的平均数值

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Kingston 2G-UDIMM 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

65 54
读取速度，GB/s

4,806.8 5,410.3
写入速度，GB/s

2,784.6 2,565.5
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

932 1018

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS632A.M4FE 8GB

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