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Samsung M3 78T5663RZ3-CF7 2GB
Kingston 9905598-025.A00G 8GB

Samsung M3 78T5663RZ3-CF7 2GB vs Kingston 9905598-025.A00G 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Kingston 9905598-025.A00G 8GB

Kingston 9905598-025.A00G 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.4
    测试中的平均数值
Kingston 9905598-025.A00G 8GB 需要考虑的原因
Kingston 9905598-025.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 65
    左右 -160% 更低的延时
  • 更快的写入速度，GB/s
    6.8 left arrow 2,784.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Kingston 9905598-025.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 25
  • 读取速度，GB/s
    4,806.8 left arrow 13.4
  • 写入速度，GB/s
    2,784.6 left arrow 6.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    932 left arrow 2045

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Kingston 9905598-025.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
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Kingston 9905598-025.A00G 8GB
Kingston 9905598-025.A00G 8GB
内存RAM
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G Skill Intl F4-2800C15-16GVR 16GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
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内存RAM
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Kingston 9905403-447.A00LF 4GB
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Crucial Technology CT8G4DFRA266.C8FE 8GB
内存RAM