Samsung M3 78T5663RZ3-CF7 2GB vs Kingston 9905664-010.A00G 4GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Kingston 9905664-010.A00G 4GB

Kingston 9905664-010.A00G 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 13.9

测试中的平均数值

Kingston 9905664-010.A00G 4GB

需要考虑的原因
Kingston 9905664-010.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 65

左右 -160% 更低的延时
更快的写入速度，GB/s

9.0 2,784.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Kingston 9905664-010.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 25
读取速度，GB/s

4,806.8 13.9
写入速度，GB/s

2,784.6 9.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 1944

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64AZ-2G6J1 16GB

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A-DATA Technology DQVE1908 512MB

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Corsair CM2X1024-6400C4 1GB

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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

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Team Group Inc. TEAMGROUP-UD4-2133 8GB

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