Samsung M3 78T5663RZ3-CF7 2GB vs Kingston XG9XKG-MIE 16GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17.2

测试中的平均数值
更快的写入速度，GB/s

2,784.6 14.3

测试中的平均数值

Kingston XG9XKG-MIE 16GB

需要考虑的原因
Kingston XG9XKG-MIE 16GB

报告一个错误

低于PassMark测试中的延时，ns

55 65

左右 -18% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Kingston XG9XKG-MIE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 55
读取速度，GB/s

4,806.8 17.2
写入速度，GB/s

2,784.6 14.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

932 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hypertec G2RT-4AFT00 16GB

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PNY Electronics PNY 2GB

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Corsair CMU32GX4M4C3466C16 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Kingston X2YH1K-MIE-NX 16GB

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SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

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SK Hynix HMA81GU6DJR8N-XN 8GB