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Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB

Samsung M3 78T5663RZ3-CF7 2GB vs Patriot Memory (PDP Systems) PSD44G266641 4GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD44G266641 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    65 left arrow 75
    左右 13% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 15
    测试中的平均数值
Patriot Memory (PDP Systems) PSD44G266641 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD44G266641 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.9 left arrow 2,784.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 75
  • 读取速度，GB/s
    4,806.8 left arrow 15.0
  • 写入速度，GB/s
    2,784.6 left arrow 6.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    932 left arrow 1729

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Patriot Memory (PDP Systems) PSD44G266641 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
Patriot Memory (PDP Systems) PSD44G266641 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston LV32D4U2S8HD-8X 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G30C15U4R.M8FE1 8GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
内存RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4000C16-16GTRSA 16GB
G Skill Intl F4-4000C16-16GTRSA 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3200C14-8GVR 8GB
G Skill Intl F4-3200C14-8GVR 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
Crucial Technology BLS4G4D240FSA.8FAR 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Nanya Technology M471A5143EB1-CRC 4GB
Nanya Technology M471A5143EB1-CRC 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston XJ69DF-HYA 8GB
Kingston XJ69DF-HYA 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston MSI26D4S9S8ME-8 8GB
Kingston MSI26D4S9S8ME-8 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
SK Hynix GKE800UD102408-2400 8GB
SK Hynix GKE800UD102408-2400 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM