Samsung M3 78T6553CZ3-CD5 512MB vs A-DATA Technology AD4S3200316G22-BHYD 16GB

总分

Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

总分

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

差异规格评论

差异

Samsung M3 78T6553CZ3-CD5 512MB

需要考虑的原因
Samsung M3 78T6553CZ3-CD5 512MB

报告一个错误

低于PassMark测试中的延时，ns

56 66

左右 15% 更低的延时
更快的读取速度，GB/s

3 13.9

测试中的平均数值

A-DATA Technology AD4S3200316G22-BHYD 16GB

需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB

报告一个错误

更快的写入速度，GB/s

13.2 1,501.2

测试中的平均数值
更高的内存带宽，mbps

25600 4200

左右 6.1 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T6553CZ3-CD5 512MB

A-DATA Technology AD4S3200316G22-BHYD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 66
读取速度，GB/s

3,161.0 13.9
写入速度，GB/s

1,501.2 13.2
内存带宽，mbps

4200 25600

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

4-4-4-12 / 533 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

381 2429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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InnoDisk Corporation M4S0-4GSSNCIK 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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Aquarius Production Company LLC 16G-D4-2666-MR 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

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G Skill Intl F3-1333C9-4GIS 4GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB