A-DATA Technology ADOVE1A0834E 1GB vs G Skill Intl F4-3466C16-16GTZ 16GB

总分

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

差异规格评论

差异

A-DATA Technology ADOVE1A0834E 1GB

需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB

报告一个错误

G Skill Intl F4-3466C16-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3466C16-16GTZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 94

左右 -309% 更低的延时
更快的读取速度，GB/s

17.9 1

测试中的平均数值
更快的写入速度，GB/s

14.5 1,165.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3466C16-16GTZ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

94 23
读取速度，GB/s

1,882.0 17.9
写入速度，GB/s

1,165.4 14.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

305 3356

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Gloway International (HK) STK4U2400D17161C 16GB

Gloway International (HK) STK4U2400D17161C 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-2400C15-8GRK 8GB

G Skill Intl F4-2400C15-8GRK 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston KHX2933C17D4/16G 16GB

Kingston KHX2933C17D4/16G 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-2133C15-16GIS 16GB

G Skill Intl F4-2133C15-16GIS 16GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB