ASint Technology SSA302G08-EGN1C 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

ASint Technology SSA302G08-EGN1C 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

总分

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

差异规格评论

差异

ASint Technology SSA302G08-EGN1C 4GB

需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 26

左右 -44% 更低的延时
更快的读取速度，GB/s

20.5 12.6

测试中的平均数值
更快的写入速度，GB/s

16.2 9.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

ASint Technology SSA302G08-EGN1C 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 18
读取速度，GB/s

12.6 20.5
写入速度，GB/s

9.5 16.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2174 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 99U5663-003.A00G 16GB

Kingston 99U5663-003.A00G 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Golden Empire CL19-19-19 D4-2666 4GB

Golden Empire CL19-19-19 D4-2666 4GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Kingston 9965600-023.A00G 16GB

Kingston 9965600-023.A00G 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Apacer Technology D12.2326WH.001 16GB

Apacer Technology D12.2326WH.001 16GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB

Crucial Technology CT8G4DFD8213.C16FA11 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 93T2950BZ3-CCC 1GB

Samsung M3 93T2950BZ3-CCC 1GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB