Samsung M471A2K43EB1-CWE 16GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

总分

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

总分

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

差异规格评论

差异

Samsung M471A2K43EB1-CWE 16GB

需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB

报告一个错误

更快的写入速度，GB/s

13.8 12.6

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 55

左右 -49% 更低的延时
更快的读取速度，GB/s

16 15.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A2K43EB1-CWE 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

55 37
读取速度，GB/s

15.8 16.0
写入速度，GB/s

13.8 12.6
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2701 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3600C14-16GTZR 16GB

G Skill Intl F4-3600C14-16GTZR 16GB

Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

Corsair CM4B16G2L2666A18K2 16GB

Corsair CM4B16G2L2666A18K2 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

Crucial Technology BLS8G4D240FSE.M16FAD 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Corsair CMU32GX4M2A2400C14 16GB

Corsair CMU32GX4M2A2400C14 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Apacer Technology 78.CAGNT.AR40B 8GB

Apacer Technology 78.CAGNT.AR40B 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Kingston 9905744-005.A00G 16GB

Kingston 9905744-005.A00G 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

V-GEN D4S8GL30A8TS5 8GB

V-GEN D4S8GL30A8TS5 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Kingston ACR16D3LS1KNG/8G 8GB

Kingston ACR16D3LS1KNG/8G 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

Crucial Technology CT16G4SFD824A.M16FA 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB