RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M471A2K43EB1-CWE 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Samsung M471A2K43EB1-CWE 16GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Samsung M471A2K43EB1-CWE 16GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M471A2K43EB1-CWE 16GB
Report a bug
Faster write speed, GB/s
13.8
12.6
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
55
Around -49% lower latency
Faster reading speed, GB/s
16
15.8
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M471A2K43EB1-CWE 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
55
37
Read speed, GB/s
15.8
16.0
Write speed, GB/s
13.8
12.6
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2701
2808
Samsung M471A2K43EB1-CWE 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471A2K43EB1-CWE 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905469-136.A00LF 4GB
Corsair CMD128GX4M8A2400C14 16GB
A-DATA Technology DQVE1908 512MB
Corsair CMW32GX4M2C3333C16 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-4400C18-8GTRS 8GB
AMD R538G1601U2S-UO 8GB
Corsair CM4X8GD3200C16K2E 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9965600-027.A01G 16GB
A-DATA Technology DDR3 1333G 2GB
Corsair CMV8GX4M1A2400C16 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Samsung M471A1G44AB0-CWE 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
G Skill Intl F4-3600C16-16GTRS 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMT64GX4M4Z3600C18 16GB
Kingston 9905403-134.A00LF 2GB
G Skill Intl F4-2800C16-4GVR 4GB
Samsung M471B5273CH0-CH9 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
×
Bug description
Source link