RAM comparison Samsung M471A2K43EB1-CWE 16GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Samsung M471A2K43EB1-CWE 16GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score

Samsung M471A2K43EB1-CWE 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M471A2K43EB1-CWE 16GB

Faster write speed, GB/s

13.8 12.6

Average value in the tests
Higher memory bandwidth, mbps

25600 19200

Around 1.33% higher bandwidth

Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Complete list of technical specifications

Samsung M471A2K43EB1-CWE 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Main characteristics

Other

Description

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2701 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns