Samsung M3 78T6553CZ3-CD5 512MB vs Lexar Co Limited LD4AS016G-H2666G 16GB

总分

Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

总分

Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

差异规格评论

差异

Samsung M3 78T6553CZ3-CD5 512MB

需要考虑的原因
Samsung M3 78T6553CZ3-CD5 512MB

报告一个错误

更快的读取速度，GB/s

3 13

测试中的平均数值

Lexar Co Limited LD4AS016G-H2666G 16GB

需要考虑的原因
Lexar Co Limited LD4AS016G-H2666G 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 56

左右 -51% 更低的延时
更快的写入速度，GB/s

7.9 1,501.2

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T6553CZ3-CD5 512MB

Lexar Co Limited LD4AS016G-H2666G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 37
读取速度，GB/s

3,161.0 13.0
写入速度，GB/s

1,501.2 7.9
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

381 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F4-3200C15-4GRKD 4GB