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Samsung M3 78T6553CZ3-CE6 512MB
Kingston 9905702-010.A00G 8GB

Samsung M3 78T6553CZ3-CE6 512MB vs Kingston 9905702-010.A00G 8GB

总分
star star star star star
Samsung M3 78T6553CZ3-CE6 512MB

Samsung M3 78T6553CZ3-CE6 512MB

总分
star star star star star
Kingston 9905702-010.A00G 8GB

Kingston 9905702-010.A00G 8GB

差异 规格 评论

差异

Samsung M3 78T6553CZ3-CE6 512MB 需要考虑的原因
Samsung M3 78T6553CZ3-CE6 512MB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.6
    测试中的平均数值
Kingston 9905702-010.A00G 8GB 需要考虑的原因
Kingston 9905702-010.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 59
    左右 -97% 更低的延时
  • 更快的写入速度，GB/s
    11.1 left arrow 1,559.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T6553CZ3-CE6 512MB
Kingston 9905702-010.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 30
  • 读取速度，GB/s
    3,505.3 left arrow 15.6
  • 写入速度，GB/s
    1,559.1 left arrow 11.1
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    407 left arrow 2792

Samsung M3 78T6553CZ3-CE6 512MB RAM的比较

Kingston KVR800D2N6/2G 2GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB

Kingston 9905702-010.A00G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Kingston 99U5428-063.A00LF 8GB
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Team Group Inc. Vulcan-1600 4GB
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