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Samsung M3 91T2953GZ3-CF7 1GB
Corsair CM4B16G2L2666A18K2 16GB

Samsung M3 91T2953GZ3-CF7 1GB vs Corsair CM4B16G2L2666A18K2 16GB

总分
star star star star star
Samsung M3 91T2953GZ3-CF7 1GB

Samsung M3 91T2953GZ3-CF7 1GB

总分
star star star star star
Corsair CM4B16G2L2666A18K2 16GB

Corsair CM4B16G2L2666A18K2 16GB

差异 规格 评论

差异

Samsung M3 91T2953GZ3-CF7 1GB 需要考虑的原因
Samsung M3 91T2953GZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.4
    测试中的平均数值
Corsair CM4B16G2L2666A18K2 16GB 需要考虑的原因
Corsair CM4B16G2L2666A18K2 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 52
    左右 -73% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 1,906.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 91T2953GZ3-CF7 1GB
Corsair CM4B16G2L2666A18K2 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 30
  • 读取速度，GB/s
    4,672.4 left arrow 17.4
  • 写入速度，GB/s
    1,906.4 left arrow 14.7
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    698 left arrow 3527

Samsung M3 91T2953GZ3-CF7 1GB RAM的比较

Samsung M3 91T2953EZ3-CF7 1GB
Samsung M3 78T2953GZ3-CF7 1GB

Corsair CM4B16G2L2666A18K2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
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Corsair CMW64GX4M4C3466C16 16GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Corsair CM4B16G2L2666A18K2 16GB
Corsair CM4B16G2L2666A18K2 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
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内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
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G Skill Intl F4-2666C19-32GNT 32GB
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Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-3200C16-8GVKBN 8GB
G Skill Intl F4-3200C16-8GVKBN 8GB
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Kingston ACR256X64D3S1333C9 2GB
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A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
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内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
Corsair CMK16GX4M1A2666C16 16GB
Corsair CMK16GX4M1A2666C16 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
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Samsung M391A1G43DB0-CPB 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C16-8GTZRA 8GB
G Skill Intl F4-4000C16-8GTZRA 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX2933C17S4/32G 32GB
Kingston KHX2933C17S4/32G 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Crucial Technology BL8G32C16U4W.M8FE 8GB
内存RAM