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Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Samsung M378A1G43DB0-CPB 8GB vs Crucial Technology BLS8G4D32AESCK.M8FE 8GB

总分
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Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
Crucial Technology BLS8G4D32AESCK.M8FE 8GB 需要考虑的原因
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 36
    左右 -24% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.3 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 29
  • 读取速度，GB/s
    15.0 left arrow 17.3
  • 写入速度，GB/s
    10.3 left arrow 13.3
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 3294

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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