RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M378A1G43DB0-CPB 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

Samsung M378A1G43DB0-CPB 8GB vs A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB 需要考虑的原因
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 36
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 33
  • 读取速度，GB/s
    15.0 left arrow 15.8
  • 写入速度，GB/s
    10.3 left arrow 11.3
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2806

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

A-DATA Technology AO2P26KC8T1-BXGSHC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
A-DATA Technology AO2P26KC8T1-BXGSHC 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CM4X8GD3000C15K4 8GB
Corsair CM4X8GD3000C15K4 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
Micron Technology 16ATF2G64HZ-2G3H1 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMW16GX4M2C3000C15 8GB
Corsair CMW16GX4M2C3000C15 8GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Kingston KHX2666C16D4/4G 4GB
Kingston KHX2666C16D4/4G 4GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Corsair CMK128GX4M8Z2933C16 16GB
Corsair CMK128GX4M8Z2933C16 16GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
内存RAM
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A1G43EB1-CRC 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Apacer Technology 78.CAGNK.4040B 8GB
Apacer Technology 78.CAGNK.4040B 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
Crucial Technology CT16G4SFS832A.M8FE 16GB
内存RAM
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Kllisre HMA81GU6AFR8N-VK 8GB
Kllisre HMA81GU6AFR8N-VK 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston X3XCFP-HYA 8GB
Kingston X3XCFP-HYA 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
内存RAM