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Samsung M378A1G43DB0-CPB 8GB
Apacer Technology 78.BAGMD.AF20B 4GB

Samsung M378A1G43DB0-CPB 8GB vs Apacer Technology 78.BAGMD.AF20B 4GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
Apacer Technology 78.BAGMD.AF20B 4GB 需要考虑的原因
Apacer Technology 78.BAGMD.AF20B 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 36
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 10.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology 78.BAGMD.AF20B 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 21
  • 读取速度，GB/s
    15.0 left arrow 18.5
  • 写入速度，GB/s
    10.3 left arrow 13.6
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2874

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.BAGMD.AF20B 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
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内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
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Kingston 9965525-140.A00LF 8GB
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内存RAM
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Crucial Technology CT51264AC800.C16FC 4GB
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A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston HP28D4S7D8HA-16X 16GB
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A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
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Ramaxel Technology RMUA5200MR78HAF-3200 8GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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Corsair CMWB8G1L3200K16W4 8GB
内存RAM
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Nanya Technology M2F2G64CB88B7N-CG 2GB
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Kingston 9905701-032.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM