Samsung M378A1G43DB0-CPB 8GB vs Chun Well Technology Holding Limited D4U0832160B 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

Chun Well Technology Holding Limited D4U0832160B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0832160B 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 36

左右 -13% 更低的延时
更快的读取速度，GB/s

20.5 15

测试中的平均数值
更快的写入速度，GB/s

14.5 10.3

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 32
读取速度，GB/s

15.0 20.5
写入速度，GB/s

10.3 14.5
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2569 3379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX3200C20S4/32GX 32GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 99P5474-014.A00LF 4GB

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Mushkin MR[A/B]4U300JJJM16G 16GB

Mushkin MR[A/B]4U300JJJM16G 16GB

Crucial Technology CT25664BA1339.M8FK 2GB

Crucial Technology CT25664BA1339.M8FK 2GB

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

Kingston 99U5471-052.A00LF 8GB

Kingston 99U5471-052.A00LF 8GB

G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

Samsung M471B5173QH0-YK0 4GB

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Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB