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Samsung M378A1G43DB0-CPB 8GB
Corsair CM4X4GF2666C16K4 4GB

Samsung M378A1G43DB0-CPB 8GB vs Corsair CM4X4GF2666C16K4 4GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Corsair CM4X4GF2666C16K4 4GB

Corsair CM4X4GF2666C16K4 4GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
Corsair CM4X4GF2666C16K4 4GB 需要考虑的原因
Corsair CM4X4GF2666C16K4 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 36
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 10.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Corsair CM4X4GF2666C16K4 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 34
  • 读取速度，GB/s
    15.0 left arrow 15.3
  • 写入速度，GB/s
    10.3 left arrow 10.7
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2796

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CM4X4GF2666C16K4 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
Samsung M393B5270CH0-CH9 4GB
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内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Corsair CM4X4GF2666C16K4 4GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905403-156.A00LF 2GB
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Apacer Technology 78.A1GC6.9H10C 2GB
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内存RAM
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A-DATA Technology DDR3 1600 4GB
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Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
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SK Hynix HMT425S6AFR6A-PB 2GB
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Kingmax Semiconductor GSAG42F-18---------- 8GB
内存RAM
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内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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内存RAM
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Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM