Samsung M378A1G43DB0-CPB 8GB vs Corsair CMD64GX4M8X4000C19 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

Corsair CMD64GX4M8X4000C19 8GB

Corsair CMD64GX4M8X4000C19 8GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

更快的读取速度，GB/s

15 12.2

测试中的平均数值

Corsair CMD64GX4M8X4000C19 8GB

需要考虑的原因
Corsair CMD64GX4M8X4000C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 -33% 更低的延时
更快的写入速度，GB/s

15.9 10.3

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

Corsair CMD64GX4M8X4000C19 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 27
读取速度，GB/s

15.0 12.2
写入速度，GB/s

10.3 15.9
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2569 3199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF2G64HZ-2G3A1 16GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Nanya Technology M2Y2G64CB8HC5N-CG 2GB

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Corsair CML8GX3M2A1866C9 4GB

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Kingston MSI24D4U7S8MB-8 8GB

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Kingston HX318C10FK/4 4GB

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Teikon TMA451S6AFR8N-TFSC 4GB

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Peak Electronics 256X64M-67E 2GB

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Crucial Technology CT16G4SFS832A.M8FB 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT4G4DFS8213.C8FHP 4GB

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Samsung M378T5663QZ3-CF7 2GB

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Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB