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Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB

Samsung M378A1G43DB0-CPB 8GB vs Crucial Technology BLT16G4D30AETA.K16FB 16GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
Crucial Technology BLT16G4D30AETA.K16FB 16GB 需要考虑的原因
Crucial Technology BLT16G4D30AETA.K16FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 36
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 10.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 26
  • 读取速度，GB/s
    15.0 left arrow 17.9
  • 写入速度，GB/s
    10.3 left arrow 14.7
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 3705

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB RAM的比较

Corsair CMD16GX4M4A2666C15 4GB
G Skill Intl F4-4000C16-16GVK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 9965589-043.E00G 16GB
Kingston 9965589-043.E00G 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
SK Hynix HMA81GU6AFR8N-UH 8GB
SK Hynix HMA81GU6AFR8N-UH 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-2400C17-8GNT 8GB
G Skill Intl F4-2400C17-8GNT 8GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Corsair CMWB8G1L3200K16W4 8GB
Corsair CMWB8G1L3200K16W4 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB
内存RAM
Kingston 9965525-023.A00LF 4GB
Kingston 9965525-023.A00LF 4GB
G Skill Intl F4-3200C14-16GTZSW 16GB
G Skill Intl F4-3200C14-16GTZSW 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
A-DATA Technology DDR4 3000 8GB
A-DATA Technology DDR4 3000 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
V-Color Technology Inc. TL48G30S8KGRGB15 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Crucial Technology CB8GS2666.C8ET 8GB
Crucial Technology CB8GS2666.C8ET 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM