Samsung M378A1G43DB0-CPB 8GB vs G Skill Intl F4-4000C18-8GTRG 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

G Skill Intl F4-4000C18-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTRG 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 36

左右 -24% 更低的延时
更快的读取速度，GB/s

19.6 15

测试中的平均数值
更快的写入速度，GB/s

17.2 10.3

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 29
读取速度，GB/s

15.0 19.6
写入速度，GB/s

10.3 17.2
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2569 4072

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

Kingston HP16D3LS1KBGH/4G 4GB

Kingston HP16D3LS1KBGH/4G 4GB

Corsair CMU32GX4M2C3000C16 16GB

Corsair CMU32GX4M2C3000C16 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Apacer Technology 78.B1GN3.AZ32B 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston KF2666C15S4/16G 16GB

Kingston KF2666C15S4/16G 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Crucial Technology BLS4G4D240FSA.8FAR 4GB

Crucial Technology BLS4G4D240FSA.8FAR 4GB